Effect of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Spray Deposited V2O5 Thin Films

  • Vijayakumar YELSANI Dept of Physics CMR Technical Campus
  • Nagaraju POTHUKANURI
  • Uday Bhasker SONTU
  • Veeraswamy YARAGANI
  • Ramana Reddy MUSKU VENKATA
Keywords: V2O5, annealing temperature, Raman spectroscopy, carrier density

Abstract

Nanostructured vanadium pentoxide (V2O5) thin films have been deposited by a simple and cost-effective spray pyrolysis technique (SPT) at substrate temperature 300 °C and post annealed at atmospheric conditions in the temperature range from 300 °C to 500 °C at a constant rate of heating. The influence of post annealing heat treatment on the crystallization of V2O5 has been investigated. Films were characterized structurally by X-ray diffraction, morphologically by Scanning electron microscopy, optically using UV-Vis spectrophotometer, electrical characterization using Hall probe and Raman spectroscopy has been carried out for phase confirmation. X-ray diffraction analysis (XRD) revealed that, as deposited films were orthorhombic structures with a preferential orientation along (0 0 1) direction. Moreover, it was observed that crystallite size increases from 22 nm to 56 nm with increase in annealing temperature. Optical properties of these samples were studied in the wavelength range 3001000 nm. Raman spectrum confirms the layered structure of V2O5 thin films. Hall Effect measurements indicate that the change in carrier concentration with increase in annealing temperature.

Author Biography

Vijayakumar YELSANI, Dept of Physics CMR Technical Campus

Dept of Physics

assistant professor

Published
2019-01-08
Section
ELECTRONIC AND OPTICAL MATERIALS