Dynamical Study of Heat Transport Properties of Porous Silicon
A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For n-type Si of 70% porosity we show the value of 35 W m-1 K-1. The method can be easily applied for any other porous or otherwise structured low-dimensional media.
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