Dynamical Study of Heat Transport Properties of Porous Silicon

  • Neringa Samuoliene Vilnius Gediminas Technical University
  • Jonas Gradauskas 1. Center for Physical Sciences and Technology and Center for Physical Sciences and Technology 2. Vilnius Gediminas Technical University
  • Algirdas Sužiedelis 1. Center for Physical Sciences and Technology and Center for Physical Sciences and Technology 2. Vilnius Gediminas Technical University
  • Marius Treideris Center for Physical Sciences and Technology and Center for Physical Sciences and Technology
  • Viktoras Vaičikauskas Center for Physical Sciences and Technology and Center for Physical Sciences and Technology
Keywords: porous silicon, transient thermoelectric effect, thermal conductivity, thermoelectric material

Abstract

A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For n-type Si of 70% porosity we show the value of 35 W m-1 K-1. The method can be easily applied for any other porous or otherwise structured low-dimensional media.

DOI: http://dx.doi.org/10.5755/j01.ms.21.2.5785

Author Biographies

Neringa Samuoliene, Vilnius Gediminas Technical University
Faculty of fundamental sciences, department of physics, Lector
Jonas Gradauskas, 1. Center for Physical Sciences and Technology and Center for Physical Sciences and Technology 2. Vilnius Gediminas Technical University
profesorius
dr. doc.
Published
2015-06-12
Section
ELECTRONIC AND OPTICAL MATERIALS