Dynamical Study of Heat Transport Properties of Porous Silicon

Neringa Samuoliene, Jonas Gradauskas, Algirdas Sužiedelis, Marius Treideris, Viktoras Vaičikauskas

Abstract


A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For n-type Si of 70% porosity we show the value of 35 W m-1 K-1. The method can be easily applied for any other porous or otherwise structured low-dimensional media.

DOI: http://dx.doi.org/10.5755/j01.ms.21.2.5785


Keywords


porous silicon, transient thermoelectric effect, thermal conductivity, thermoelectric material

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Print ISSN: 1392–1320
Online ISSN: 2029–7289