Reactive Sputter Deposition of NiCrxOy Films Using NiCr Target
In this paper an original numerical model, based on the standard Berg model, was used to simulate the growth mechanism of NiCrxOy deposited with changing oxygen flow during reactive sputter deposition. The effect of oxygen flow rate on the discharge voltage, deposition rate and the material elementary composition were investigated. The ratio of Ni and Cr content in the film was measured using energy-dispersive X-ray spectroscopy (EDX). EDX detected a decrease in the Cr concentration with the increasing of oxygen flow rate due to the preferential oxidation of Cr to Cr2O3. Results show a reasonable agreement between numerical and experimental data.
Copyright terms are indicated in the Republic of Lithuania Law on Copyright and Related Rights, Articles 4-37.
The copyright for articles in this journal are retained by the author(s), with first publication rights granted to the journal. By virtue of their appearance in this open access journal, articles are free to use with proper attribution in educational and other non-commercial settings.