Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition

Abstract

Boron-doped diamond (BDD) films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) according to various mixture ratios of CH₄/H₂/B(OCH₃)₃ gas. The Raman performances and surface morphologies of the BDD films were then characterized by Raman spectroscopy and scanning electron microscopy (SEM). Results indicated that the flow rate of B(OCH₃)₃ had marked effects on the growth characteristics of the produced boron-doped diamond films. The presence and concentration of the doped boron atoms significantly altered both the surface morphologies and structures of the diamond films. With increasing flow rate of B(OCH₃)₃, the crystal grain surfaces became smooth as visible under SEM. The B-doping levels in these films increased from 1.75×10¹⁹cm^-3 to a maximum of 2.4×10²¹cm^-3, estimated from the Raman spectra.

DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12923