Electron Velocity Enhancement in Polarization-doped AlGaN
AbstractThree-dimensional electron gas/slabs (3DEG/S) can be obtained using the technique of polarization bulk doping in graded AlGaN semiconductor layer on GaN. Transport characteristics of the graded AlGaN are investigated experimentally through nanosecond-pulsed measurements. The measured current-voltage dependences were used to determine drift velocity data assuming no change in electron density upon applied electric field. The velocity results are compared with that of GaN and ungraded AlGaN/GaN. Also, experimental results are compared with those of Monte Carlo simulation.
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