Dependence of Electrical and Optical Properties of Sol-gel-derived SnO2 Thin Films on Sb-substitution

  • Elisée MUHIRE Lanzhou University
  • Jiao YANG Henan University of Science and Technology
  • Xuejian HUO Lanzhou University
  • Meizhen GAO Lanzhou University
Keywords: SnO2 thin films, spin-coating, optical constants, resistivity

Abstract

In the present work, Sb-doped SnO2 (ATO) thin films were deposited on Si substrates by spin-coating method and the influence of Sb-doping on surface roughness, structural, optical and electrical properties has been investigated. AFM measurements show that the surface roughness decreases with increasing the Sb-doping concentration up to 5 mol%. XRD results confirm that all prepared ATO films have a tetragonal rutile structure of tin oxide. It has been observed that both the crystallite size and the extinction coefficient decrease with increasing Sb-doping concentration up to 5 mol%, while the refractive index increases with increasing Sb-doping concentration. The electrical resistivity decreases with increasing Sb-doping concentration, and the lowest resistivity obtained is 8.5 × 10-3 Ω.cm for SnO2 doped with 7.5 mol% of Sb.

Author Biographies

Elisée MUHIRE, Lanzhou University

School of Physical Science and Technology

Master's student

Jiao YANG, Henan University of Science and Technology

School of Physics and Engineering

Lecturer, PhD

Xuejian HUO, Lanzhou University

School of Physical Science and Technology,

Master's student

Meizhen GAO, Lanzhou University

School of Physical Science and Technology,

Professor

Published
2019-01-08
Section
ELECTRONIC AND OPTICAL MATERIALS