Dielectric Properties of the Ion Beam Deposited SiOx Doped DLC Films
In the present study SiOx doped DLC thin films were synthesized from hexamethyldisiloxane vapor and hydrogen gas mixture by direct ion beam deposition. Dielectric properties of the films were evaluated by measuring breakdown field strength and dielectric permittivity. Chemical composition and structure of the deposited films were investigated by X-ray photoelectron spectroscopy and FT-IR spectrometry. Breakdown field strength of the samples was in (0.39 – 1.86) MV/cm range and dielectric permittivity – in 2.8 – 4.5 range. Dielectric properties of the deposited films are dependent on the substrate material, top electrode diameter as well as the ion beam current density and hydrogen flux during deposition.
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