Influence of the High Dose Ion Implantation on Manganin Sensor Properties

Abstract

The simple resistance model for deeper interpretation of investigations of implanted flat elements, with well localized
volume of high deposition of ions and structural defects, has been proposed. The influences of krypton and complex
bismuth and krypton ions implantation to the manganin on its sensitivity to pressure has been investigated. Manganin
specimens had foil type shape of 10 μm thick and of relatively large planar dimensions. The implanted dose of krypton
ions was of 2.5×1015 Kr ion/cm2 of energy of 245 MeV/ion and in the case of complex implantation for one side
2.5×1016 Bi ions/cm2 and then both sides 2.5×1017 Kr ion/cm2 and energy about 255 keV/ion. Implantation of high
energy Kr ions gave only few percents changes of pressure sensitivity but for complex Kr-Bi implantation the increase
of 25 % in mean pressure sensitivity of manganin have been observed. Using modelling of resistance properties of
manganin specimen – as parallel electrically connected strong implanted and almost not implanted parts – it was
possible to calculate the pressure coefficient of strong implanted part which appeared to be higher than those as for mean
value by about 200 %. High dose implantation of Kr and Bi ions also remarkably change a temperature – resistance
characteristic of manganin making it more convenient for use in temperature range close to room temperatures