Two-step Fabrication of Large Area SiO2/Si Membranes

Authors

  • Viktoras GRIGALIŪNAS Kaunas University of Technology
  • Brigita ABAKEVIČIENĖ Kaunas University of Technology
  • Ignas GRYBAS Kaunas University of Technology
  • Angelė GUDONYTĖ Kaunas University of Technology
  • Vitoldas KOPUSTINSKAS Kaunas University of Technology
  • Darius VIRŽONIS Kaunas University of Technology
  • Ramūnas NAUJOKAITIS Kaunas University of Technology
  • Sigitas TAMULEVIČIUS Kaunas University of Technology

DOI:

https://doi.org/10.5755/j01.ms.18.4.3090

Keywords:

SiO2/Si membrane, TMAH etching, reactive ion etching, surface roughness

Abstract

Two-step fabrication technique of SiO2/Si membrane combining the deep local etching of double side polished and thermally oxidized silicon <100> wafer in tetramethylammonium hydroxide (TMAH) water solution and SF6/O2 reactive ion etching is presented in this study. The influence of temperature on stress and deformations of membrane was simulated using Solid Works software. The study of influence of photomask opening size on etching rate shows that TMAH etching rate V = 0.44 mm/min is higher for the biggest opening, whereas for smaller openings the etching rate is evidently decreased. It was revealed that TMAH during long etching time smoothly affects thermally grown silicon dioxide film as surface roughness Ra increases from 0.558 μm to 0.604 μm. SF6/O2 reactive etching rate is smoothly dependent on deep opening size when plasma power density varies from 0.25 W/cm2 to 1.0 W/cm2.

DOI: http://dx.doi.org/10.5755/j01.ms.18.4.3090

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Published

2012-12-13

Issue

Vol. 18 No. 4 (2012)

Section

ELECTRONIC AND OPTICAL MATERIALS

License

 

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