Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

  • Šarūnas MEŠKINIS Kaunas University of Technology
  • Mindaugas PUCĖTA Kaunas University of Technology
  • Kęstutis ŠLAPIKAS Kaunas University of Technology
  • Sigitas TAMULEVIČIUS Kaunas University of Technology
  • Angelė GUDONYTĖ Kaunas University of Technology
  • Juozas Vidas GRAŽULEVIČIUS Kaunas University of Technology
  • Asta MICHALEVIČIŪTĖ Kaunas University of Technology
  • Tadas MALINAUSKAS Kaunas University of Technology
  • Jonas KERUCKAS Kaunas University of Technology
  • Vytautas GETAUTIS Kaunas University of Technology
Keywords: organic semiconductor, metal-semiconductor contacts, spin coating, current-voltage characteristics, charge transport mechanism

Abstract

In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V) characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in
(0500) V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.

DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816

Published
2013-03-19
Section
ELECTRONIC AND OPTICAL MATERIALS