Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

Šarūnas MEŠKINIS, Mindaugas PUCĖTA, Kęstutis ŠLAPIKAS, Sigitas TAMULEVIČIUS, Angelė GUDONYTĖ, Juozas Vidas GRAŽULEVIČIUS, Asta MICHALEVIČIŪTĖ, Tadas MALINAUSKAS, Jonas KERUCKAS, Vytautas GETAUTIS

Abstract


In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V) characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in
(0 500) V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.

DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816


Keywords


organic semiconductor; metal-semiconductor contacts; spin coating; current-voltage characteristics; charge transport mechanism

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Print ISSN: 1392–1320
Online ISSN: 2029–7289