Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

Authors

  • Šarūnas MEŠKINIS Kaunas University of Technology
  • Mindaugas PUCĖTA Kaunas University of Technology
  • Kęstutis ŠLAPIKAS Kaunas University of Technology
  • Sigitas TAMULEVIČIUS Kaunas University of Technology
  • Angelė GUDONYTĖ Kaunas University of Technology
  • Juozas Vidas GRAŽULEVIČIUS Kaunas University of Technology
  • Asta MICHALEVIČIŪTĖ Kaunas University of Technology
  • Tadas MALINAUSKAS Kaunas University of Technology
  • Jonas KERUCKAS Kaunas University of Technology
  • Vytautas GETAUTIS Kaunas University of Technology

DOI:

https://doi.org/10.5755/j01.ms.19.1.3816

Keywords:

organic semiconductor, metal-semiconductor contacts, spin coating, current-voltage characteristics, charge transport mechanism

Abstract

In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V) characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in
(0 – 500) V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.

DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816

Downloads

Published

2013-03-19

Issue

Vol. 19 No. 1 (2013)

Section

ELECTRONIC AND OPTICAL MATERIALS

License

 

The copyrights for articles in this journal are retained by the author(s), with first publication rights granted to the journal. By virtue of their appearance in this open-access journal, articles are free to use with proper attribution in educational and other non-commercial settings.