Spectroscopy of Technological Defects in Si Solar Cells by Analysis of Temperature Dependent Generation Currents

  • Jevgenij PAVLOV Vilnius University, Institute of Applied Research
  • Darius BAJARŪNAS Vilnius University, Institute of Applied Research
  • Tomas ČEPONIS Vilnius University, Institute of Applied Research
  • Eugenijus GAUBAS Vilnius University, Institute of Applied Research
  • Dovilė MEŠKAUSKAITĖ Vilnius University, Institute of Applied Research
Keywords: barrier capacitance charging current, Si, solar cell, DLTS

Abstract

The efficiency of solar cells considerably depends on the technological defects introduced by the formation of junctions, passivation layers and electrodes. Identification of these defects present in the high conductivity base layer of modern solar cells by usage of the standard techniques, such as capacitance deep level spectroscopy, is restricted by extremely small size of samples with inherent enhanced leakage current on sample boundaries. Therefore, it is important to develop the alternative methods for the defect spectroscopy in the high conductivity junction structures, to directly control a relative low concentration of the technological defects. In this work, the spectroscopy of deep traps has been performed by combining the temperature scans of the thermal generation currents extracted from barrier capacitance charging transients and capacitance deep level transient spectroscopy techniques. The dominant carrier traps ascribed to the Cu and Ni impurities were revealed.

DOI: http://dx.doi.org/10.5755/j01.ms.20.3.5194

Author Biographies

Jevgenij PAVLOV, Vilnius University, Institute of Applied Research
PHD
Tomas ČEPONIS, Vilnius University, Institute of Applied Research
Dr.
Eugenijus GAUBAS, Vilnius University, Institute of Applied Research
Dr.
Published
2014-09-16
Section
ELECTRONIC AND OPTICAL MATERIALS