Photoluminescence Properties of Porous Silicon with CdSe/ZnS Quantum Dots
AbstractIn this work we have produced visible light emitting quantum dots (QD) of CdSe/ZnS and precipitated them onto the surface of porous silicon structure. Combining basic materials, such as porous silicon, with nanoparticles enables producing of low-cost light emitting materials, what is economically useful and important nowadays. The porous silicon (PS) structures were prepared from 5 min to 60 min by chemical etching at room temperature in HF : HNO3 solution and cleaned in the H2SO4 : H2O2 mixture. The structures of PS and PS-QD were investigated by SEM and UV-VIS spectroscopy. Absorption and photoluminescence of the samples, were measured in the near UV and visible spectral region. Two peaks of photoluminescence of PS-QD at 550 nm and 682 nm were found and different increase of photoluminescence intensity of these peaks depending on excitation wavelength was detected and discussed.
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