Photoluminescence Properties of Porous Silicon with CdSe/ZnS Quantum Dots

  • Renata JARIMAVIČIŪTĖ-ŽVALIONIENĖ Kaunas College
  • Jacek WALUK Polish Academy of Sciences
  • Igoris PROSYČEVAS Kaunas University of Technology
Keywords: chemical etching, porous silicon, photoluminescence, absorption, quantum dots

Abstract

In this work we have produced visible light emitting quantum dots (QD) of CdSe/ZnS and precipitated them onto the surface of porous silicon structure. Combining basic materials, such as porous silicon, with nanoparticles enables producing of low-cost light emitting materials, what is economically useful and important nowadays. The porous silicon (PS) structures were prepared from 5 min to 60 min by chemical etching at room temperature in HF : HNO3 solution and cleaned in the H2SO: H2O2 mixture. The structures of PS and PS-QD were investigated by SEM and UV-VIS spectroscopy. Absorption and photoluminescence of the samples, were measured in the near UV and visible spectral region. Two peaks of photoluminescence of PS-QD at 550 nm and 682 nm were found and different increase of photoluminescence intensity of these peaks depending on excitation wavelength was detected and discussed.

http://dx.doi.org/10.5755/j01.ms.17.3.585

Author Biography

Renata JARIMAVIČIŪTĖ-ŽVALIONIENĖ, Kaunas College

Section
ELECTRONIC AND OPTICAL MATERIALS