Vanadium States in Doped Bi12SiO20
We have investigated the absorption of the V doped Bi12SiO20 in the spectral region 1.45-2 eV (11 696 – 16 129 cm-1). The observed absorption bands are due to the V2+, V3+ and V4+ ions in the same spectral region. These absorption bands do not contain information about the exact energy position of the vanadium levels. Therefore, we have calculated the second derivative of absorption. It is established that all vanadium ions are surrounded by distorted tetrahedral coordination in Bi12SiO20 (BSO). The energy level structures of the vanadium ions in BSO are also presented. We have calculated the field parameters Dqand the Racah parameters B and C for V2+ ion. We have determined the field parameters Dq, Ds and Dt for V3+ ion.
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