Vanadium States in Doped Bi12SiO20

Authors

  • Petya Petkova Shumen University “Konstantin Preslavsky”
  • Petko VASILEV Shumen University “Konstantin Preslavsky”
  • Mustafa MUSTAFA Shumen University “Konstantin Preslavsky”
  • Ivaylo PARUSHEV Shumen University “Konstantin Preslavsky”

DOI:

https://doi.org/10.5755/j01.ms.21.2.6140

Keywords:

vanadium doped sillenites, oxygen tetrahedra, Racah parameters, Jahn-Teller effect, spin-orbit interaction

Abstract

We have investigated the absorption of the V doped Bi12SiO20 in the spectral region 1.45-2 eV (11 696 – 16 129 cm-1). The observed absorption bands are due to the V2+, V3+ and V4+ ions in the same spectral region. These absorption bands do not contain information about the exact energy position of the vanadium levels. Therefore, we have calculated the second derivative of absorption. It is established that all vanadium ions are surrounded by distorted tetrahedral coordination in Bi12SiO20 (BSO). The energy level structures of the vanadium ions in BSO are also presented. We have calculated the field parameters Dq and the Racah parameters B and C for V2+ ion. We have determined the field parameters Dq, Ds and Dt for V3+ ion.

DOI: http://dx.doi.org/10.5755/j01.ms.21.2.6140

Downloads

Published

2015-06-29

Issue

Vol. 21 No. 2 (2015)

Section

ELECTRONIC AND OPTICAL MATERIALS

License

 

The copyrights for articles in this journal are retained by the author(s), with first publication rights granted to the journal. By virtue of their appearance in this open-access journal, articles are free to use with proper attribution in educational and other non-commercial settings.