Time-resolved Photoluminescence Characterisation of GaAs/AlxGa1–xAs Structures Designed for Microwave and Terahertz Detectors

  • Aurimas ČERŠKUS Center for Physical Sciences and Technology
  • Viktorija NARGELIENĖ Center for Physical Sciences and Technology
  • Algirdas SUŽIEDĖLIS Center for Physical Sciences and Technology
  • Steponas AŠMONTAS Center for Physical Sciences and Technology
  • Jonas GRADAUSKAS Center for Physical Sciences and Technology
  • Benas KUNDROTAS Vilnius Gediminas Technical University
  • Roma RINKEVIČIENĖ Vilnius Gediminas Technical University
Keywords: GaAs, AlGaAs, heterostructures, photoluminescence, lifetime, exciton, time-resolved photoluminescence

Abstract

The time-resolved photoluminescence of donor Si-doped GaAs/AlxGa1-xAs (x = 0.3 0.25, 0.2, 0.1) structures designed for microwave and terahertz detectors have been investigated at T = 3.6 K temperature. The excitonic, impurity and defect related emission lifetimes are revealed for these structures. Possible mechanisms of carrier recombination are discussed. Concentration of acceptor, carbon and silicon, are evaluated from measured lifetimes in the structures.

 

DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6317

Published
2014-06-13
Section
ELECTRONIC AND OPTICAL MATERIALS