Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover
AbstractIn this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunction diode placed in a microwave electric field. Different temperature dependences of the detected voltage for different types of microwave diodes fabricated on the base of GaAs/Al0.25Ga0.75As heterostructures have been measured.
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