Silicon Nanostructures For Efficient Light Absorption In Photovoltaic Devices
AbstractPorous silicon light trapping layers (por-Si LTL) were manufactured using electrochemical etching. Optical measurements have shown the improved por-Si LTL optical properties versus bulk silicon. The p-n junction was formed by boron diffusion from borosilicate glasses. Scanning Kelvin Force Microscopy (SKFM) and Tunnelling Atomic Force Microscopy (TUNA) techniques were used to determine the location of p-n junction in samples with porous silicon light trapping layers.
Copyright terms are indicated in the Republic of Lithuania Law on Copyright and Related Rights, Articles 4-37.
The copyright for articles in this journal are retained by the author(s), with first publication rights granted to the journal. By virtue of their appearance in this open access journal, articles are free to use with proper attribution in educational and other non-commercial settings.