Silicon Nanostructures For Efficient Light Absorption In Photovoltaic Devices
AbstractPorous silicon light trapping layers (por-Si LTL) were manufactured using electrochemical etching. Optical measurements have shown the improved por-Si LTL optical properties versus bulk silicon. The p-n junction was formed by boron diffusion from borosilicate glasses. Scanning Kelvin Force Microscopy (SKFM) and Tunnelling Atomic Force Microscopy (TUNA) techniques were used to determine the location of p-n junction in samples with porous silicon light trapping layers.
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