Silicon Nanostructures For Efficient Light Absorption In Photovoltaic Devices

Marius TREIDERIS; Virginijus BUKAUSKAS; Alfonsas RĖZA; Irena ŠIMKIENĖ; Arūnas ŠETKUS; Andrius MANEIKIS

doi:10.5755/j01.ms.20.2.6326

Silicon Nanostructures For Efficient Light Absorption In Photovoltaic Devices

Marius TREIDERIS Center for Physical Sciences and Technology
Virginijus BUKAUSKAS Center for Physical Sciences and Technology
Alfonsas RĖZA Center for Physical Sciences and Technology
Irena ŠIMKIENĖ Center for Physical Sciences and Technology
Arūnas ŠETKUS Center for Physical Sciences and Technology
Andrius MANEIKIS Center for Physical Sciences and Technology

DOI: https://doi.org/10.5755/j01.ms.20.2.6326

Keywords: porous silicon, light trapping layers, p-n junction

Abstract

Porous silicon light trapping layers (por-Si LTL) were manufactured using electrochemical etching. Optical measurements have shown the improved por-Si LTL optical properties versus bulk silicon. The p-n junction was formed by boron diffusion from borosilicate glasses. Scanning Kelvin Force Microscopy (SKFM) and Tunnelling Atomic Force Microscopy (TUNA) techniques were used to determine the location of p-n junction in samples with porous silicon light trapping layers.

DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6326

Published

2014-06-13

Issue

Vol 20 No 2 (2014)

Section

ELECTRONIC AND OPTICAL MATERIALS

The copyrights for articles in this journal are retained by the author(s), with first publication rights granted to the journal. By virtue of their appearance in this open-access journal, articles are free to use with proper attribution in educational and other non-commercial settings.