Formation Technology of Graded-Gap AlxGa1-xAs Solar Cell Structure Separated from GaAs Substrate

  • Aldis ŠILĖNAS Center for Physical Sciences and Technology
  • Angelė STEIKŪNIENĖ Center for Physical Sciences and Technology
  • Gytis STEIKŪNAS Center for Physical Sciences and Technology
Keywords: graded-gap AlxGa1–xAs structure, sollar cell, selective etching

Abstract

Formation technology of graded-gap GaAs-AlxGa1–xAs sollar cell structure separated from GaAs substrate is developed. The technology composed of mechanical polishing and multi-step wet chemical etching enables to produce mechanically robust, comfortable to apply without special precautions solar cell. Open wide-gap surface obtained smooth (Ra < 21 nm) around the active area for the structure with additional GaAs stop-layer. The supporting frame formed in the perimeter of the structure protects it from a bend. The formation technology does not impair electrical properties of the grown epitaxial structure.

DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6327

Published
2014-06-13
Section
ELECTRONIC AND OPTICAL MATERIALS