Formation Technology of Graded-Gap AlxGa1-xAs Solar Cell Structure Separated from GaAs Substrate

Aldis ŠILĖNAS, Angelė STEIKŪNIENĖ, Gytis STEIKŪNAS

Abstract


Formation technology of graded-gap GaAs-AlxGa1–xAs sollar cell structure separated from GaAs substrate is developed. The technology composed of mechanical polishing and multi-step wet chemical etching enables to produce mechanically robust, comfortable to apply without special precautions solar cell. Open wide-gap surface obtained smooth (Ra < 21 nm) around the active area for the structure with additional GaAs stop-layer. The supporting frame formed in the perimeter of the structure protects it from a bend. The formation technology does not impair electrical properties of the grown epitaxial structure.

DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6327


Keywords


graded-gap AlxGa1–xAs structure; sollar cell; selective etching

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Print ISSN: 1392–1320
Online ISSN: 2029–7289