Formation Technology of Graded-Gap AlxGa1-xAs Solar Cell Structure Separated from GaAs Substrate
Formation technology of graded-gap GaAs-AlxGa1–xAs sollar cell structure separated from GaAs substrate is developed. The technology composed of mechanical polishing and multi-step wet chemical etching enables to produce mechanically robust, comfortable to apply without special precautions solar cell. Open wide-gap surface obtained smooth (Ra < 21 nm) around the active area for the structure with additional GaAs stop-layer. The supporting frame formed in the perimeter of the structure protects it from a bend. The formation technology does not impair electrical properties of the grown epitaxial structure.
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