The Investigation of the Zr-doped LaNbO4 Thin Ceramic Films by Electrochemical Impedance Spectroscopy

  • Darius Virbukas Kaunas University of Technology
  • Kristina Bočkutė Kaunas University of Technology
  • Giedrius Laukaitis Kaunas University of Technology
Keywords: Complex electrochemical impedance spectroscopy, magnetron sputtering, thin films, LaNbO4


Thin Zr-doped lanthanum niobium oxide (LaNb1-xZrxO4) films were formed on the optical quartz (SiO2) substrates using magnetron sputtering technique. Formed LaNb1-xZrxO4 thin films were characterized using different techniques: X-ray diffraction (XRD), scanning electron microscope (SEM) and impedance spectroscopy. Electrical parameters of LaNb1-xZrxO4 thin ceramic were investigated in the frequency range from 0.1 Hz to 1.0 MHz in temperature range from 773 to 1173 K.

It was determined that LaNb1-xZrxO4 thin ceramic films have the tetragonal structure and non-Debye type of relaxation. The activation energy was estimated from the relaxation time of impedance, electric modulus and conductivity resulting the activation energies vary from 1.12 ± 1 eV (Zr 1.99at.%), to 1.24 eV±1 eV (Zr 0.62at.%).


Author Biographies

Darius Virbukas, Kaunas University of Technology

Physics Department

Kristina Bočkutė, Kaunas University of Technology

Physics Department

Giedrius Laukaitis, Kaunas University of Technology

Physics Department