Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Abstract

A modified two-step carbonization process was used to growth high oriented 3C-SiC films on Si(100) substrates by using SiH₄ and C₃H₈ as precursors. The investigation revealed that the C/Si Moore ratio has important influences on the SiC nucleation model on Si substrates and the crystal quality of 3C-SiC films. The effect of C/Si Moore ratio on the SiC/Si(100) were evaluated by Microscopy and SEM. This indicates that the growth model of the individual nuclei gradually changed from vertical to lateral growth as the C/Si Moore ratio increased. High-resolution X-ray diffraction and Raman spectra were used to analyze the crystalline quality of 3C-SiC films grown at 1385 °C under different C/Si ratios. The results showed that the optimum C/Si Moore ratio for high oriented and high crystal quality 3C-SiC films was 1.6. The mirro-like high-crystallinity 3C-SiC films on the Si(100) was grown with a 1.6 C/Si ratio at 1385 °C for 1hr. The surface roughness was 3.6nm.

DOI: http://dx.doi.org/10.5755/j01.ms.23.3.16323