Electron Velocity Enhancement in Polarization-doped AlGaN

Authors

  • Linas ARDARAVIČIUS Semiconductor Physics Institute of Center for Physical Sciences & Technology A. Gostauto 11 LT-01108 Vilnius
  • Oleg KIPRIJANOVIČ Semiconductor Physics Institute of Center for Physical Sciences & Technology A. Gostauto 11 LT-01108 Vilnius
  • Juozapas LIBERIS Semiconductor Physics Institute of Center for Physical Sciences & Technology A. Gostauto 11 LT-01108 Vilnius

DOI:

https://doi.org/10.5755/j01.ms.19.2.1797

Keywords:

graded AlGaN/GaN, current-voltage dependence, polarization doping, high electric fields, electron drift velocity

Abstract

Three-dimensional electron gas/slabs (3DEG/S) can be obtained using the technique of polarization bulk doping in graded AlGaN semiconductor layer on GaN. Transport characteristics of the graded AlGaN are investigated experimentally through nanosecond-pulsed measurements. The measured current-voltage dependences were used to determine drift velocity data assuming no change in electron density upon applied electric field. The velocity results are compared with that of GaN and ungraded AlGaN/GaN. Also, experimental results are compared with those of Monte Carlo simulation.

DOI: http://dx.doi.org/10.5755/j01.ms.19.2.1797

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Published

2013-05-23

Issue

Vol. 19 No. 2 (2013)

Section

ELECTRONIC AND OPTICAL MATERIALS

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