Effect of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Spray Deposited V2O5 Thin Films

Authors

  • Vijayakumar YELSANI Dept of Physics CMR Technical Campus
  • Nagaraju POTHUKANURI
  • Uday Bhasker SONTU
  • Veeraswamy YARAGANI
  • Ramana Reddy MUSKU VENKATA

DOI:

https://doi.org/10.5755/j01.ms.25.1.18492

Keywords:

V2O5, annealing temperature, Raman spectroscopy, carrier density

Abstract

Nanostructured vanadium pentoxide (V2O5) thin films have been deposited by a simple and cost-effective spray pyrolysis technique (SPT) at substrate temperature 300 °C and post annealed at atmospheric conditions in the temperature range from 300 °C to 500 °C at a constant rate of heating. The influence of post annealing heat treatment on the crystallization of V2O5 has been investigated. Films were characterized structurally by X-ray diffraction, morphologically by Scanning electron microscopy, optically using UV-Vis spectrophotometer, electrical characterization using Hall probe and Raman spectroscopy has been carried out for phase confirmation. X-ray diffraction analysis (XRD) revealed that, as deposited films were orthorhombic structures with a preferential orientation along (0 0 1) direction. Moreover, it was observed that crystallite size increases from 22 nm to 56 nm with increase in annealing temperature. Optical properties of these samples were studied in the wavelength range 300 – 1000 nm. Raman spectrum confirms the layered structure of V2O5 thin films. Hall Effect measurements indicate that the change in carrier concentration with increase in annealing temperature.

Author Biography

  • Vijayakumar YELSANI, Dept of Physics CMR Technical Campus

    Dept of Physics

    assistant professor

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Published

2019-01-08

Issue

Section

ELECTRONIC AND OPTICAL MATERIALS