Dependence of Electrical and Optical Properties of Sol-gel-derived SnO2 Thin Films on Sb-substitution

Authors

  • Elisée MUHIRE Lanzhou University
  • Jiao YANG Henan University of Science and Technology
  • Xuejian HUO Lanzhou University
  • Meizhen GAO Lanzhou University

DOI:

https://doi.org/10.5755/j01.ms.25.1.19172

Keywords:

SnO2 thin films, spin-coating, optical constants, resistivity

Abstract

In the present work, Sb-doped SnO2 (ATO) thin films were deposited on Si substrates by spin-coating method and the influence of Sb-doping on surface roughness, structural, optical and electrical properties has been investigated. AFM measurements show that the surface roughness decreases with increasing the Sb-doping concentration up to 5 mol%. XRD results confirm that all prepared ATO films have a tetragonal rutile structure of tin oxide. It has been observed that both the crystallite size and the extinction coefficient decrease with increasing Sb-doping concentration up to 5 mol%, while the refractive index increases with increasing Sb-doping concentration. The electrical resistivity decreases with increasing Sb-doping concentration, and the lowest resistivity obtained is 8.5 × 10-3 Ω.cm for SnO2 doped with 7.5 mol% of Sb.

Author Biographies

  • Elisée MUHIRE, Lanzhou University

    School of Physical Science and Technology

    Master's student

  • Jiao YANG, Henan University of Science and Technology

    School of Physics and Engineering

    Lecturer, PhD

  • Xuejian HUO, Lanzhou University

    School of Physical Science and Technology,

    Master's student

  • Meizhen GAO, Lanzhou University

    School of Physical Science and Technology,

    Professor

Downloads

Published

2019-01-08

Issue

Section

ELECTRONIC AND OPTICAL MATERIALS