Kinetics of Residual Stresses in Electrochemically Doped ITO Thin Films

Authors

  • Arnoldas UŽUPIS*, Bonifacas VENGALIS, Vaclovas LISAUSKAS, Sigitas TAMULEVIČIUS, Liudvikas AUGULIS Lithuanian University of Agriculture, Faculty of Water and Land Management, Department of Physics

Keywords:

indium tin oxide, residual stress, electrochemical doping, magnetron sputtering.

Abstract

Indium-Tin-Oxide (ITO) thin films were deposited by a reactive DC magnetron sputtering at T = (100 ÷ 700) °C on
amorphous quartz substrates. Oxygen content of the as grown films was varied by electrochemical doping using 20 %
water solution of acetic acid (CH3COOH). The dependence of residual stress of the system ITO – quartz substrate was
studied in a course of the electrochemical doping. We have found that residual stress of the ITO thin films decreased
with doping by additional oxygen ions into the films from the solution.

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Published

2006-12-08

Issue

Vol. 12 No. 4 (2006)

Section

ELECTRONIC AND OPTICAL MATERIALS

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