“Black Box” Approach for Studying High-Flux, High-Fluence Implantation Effects

Abstract

A published “Black box” model, designed to study high-flux, high-fluence and low-energy ion irradiation effects in materials, in this paper is developed for continuously expanding altered layer. It enables to introduce diffusion into equations. The altered layer is considered as a “black box” with input and output parameters, such as sputtering rate, flux and fluence of incident atoms and supply rate of matrix atoms arriving from the bulk due to continuous movement of the interface boundary of the altered layer. Analysis of new rate equations is carried out and the role of the sputtering, diffusion and flux effects on the kinetics of incident atoms accommodation is studied.