Deposition of YSZ Thin Films Using Electron Beam Evaporation Technique

Abstract

Formation of YSZ (yttrium stabilized zirconium oxide) thin films using electron beam (e-beam) physical vapor deposition technique was studied. The influence of e-beam gun power on growth of YSZ thin film was analyzed. The YSZ thin films (1.5 – 2 μm thickness) were deposited on optical quartz (SiO2). Tetragonal phase ZrO2 stabilized by 8 mol% of Y2O3 (8YSZ) ceramic powder was used as evaporation material. The substrate temperature was changed in the range of 20 °C – 600 °C and its influence on the crystallinity of deposited YSZ thin films was analyzed. The surface of the YSZ thin films was investigated by scanning electron microscope (SEM) and optical microscope. It was found that the e-beam power has the influence on the crystal orientation and homogeneity of the formed YSZ thin films. The dominant orientation of YSZ thin films texture is tetragonal (101) and is kept the same at different gun powers. The crystallite size varied between 12 – 49 nm and increased linearly with the substrate temperature.