Formation of Pores in Ge Single Crystal by Laser Radiation

Authors

  • Artur MEDVID’∗, Aleksandr MYCHKO, Anatolij KRIVICH, Pavel ONUFRIJEVS Laboratory of Semiconductor Physics, Riga Technical University

Keywords:

surface recombination velocity, Ge single crystal, YAG:Nd laser, light pressure.

Abstract

It was found an increase of a surface recombination velocity (s) on a surface of Ge single crystal under irradiation by YAG:Nd laser. The increase of the s is explained by generation of pores, whose dimensions decrease with the number of laser pulses. This process is explained by uneven light pressure of the running laser modes on the irradiated surface close to a melting temperature.

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Published

2004-09-13

Issue

Vol. 10 No. 3 (2004)

Section

Articles

License

 

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