Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion

Khimmatali JURAEV; Mardonbek KHAJIEV; Aleksandr  KUTLIMRATOV; Abdumirkhakim AKHMEDOV; Dilmurad SAIDOV

doi:10.5755/j02.ms.36681

Authors

Khimmatali JURAEV Physical-Technical Institute of Uzbekistan Academy of Sciences https://orcid.org/0000-0001-8963-3848
Mardonbek KHAJIEV Physical-Technical Institute of Uzbekistan Academy of Sciences https://orcid.org/0000-0003-0007-8484
Aleksandr KUTLIMRATOV Physical-Technical Institute of Uzbekistan Academy of Sciences https://orcid.org/0000-0001-6390-7812
Abdumirkhakim AKHMEDOV Tashkent Institute of Irrigation and Agricultural Mechanization Engineers https://orcid.org/0009-0008-4615-102X
Dilmurad SAIDOV Urgench branch of Tashkent University of Information Technologies named after Muhammad al-Khwarizmi Urgench https://orcid.org/0009-0001-8269-7782

DOI:

https://doi.org/10.5755/j02.ms.36681

Keywords:

4H-SiC, aluminum diffusion, p-n junction, I-V characteristic, C-V characteristic

Abstract

In this paper, the electrophysical characteristics of the 4H-SiC p-n junction created by low-temperature diffusion of aluminum were studied. Current-voltage (I-V) characteristics are analysed, and the current transport mechanisms in 4H-SiC p-n junctions are discussed. It is shown that at low forward bias voltages, the generation–recombination mechanism dominates, and the I-V characteristics at voltages U > 3.0 V obey the linear law. At reverse biases, the dominant mechanism of current transfer is limited by the space charge.