Personalized Electronic Signature Technology Based on Stress Luminescent Materials

Abstract

Electronic signatures play a crucial role in verifying signer identities, but their lack of personalized information increases the risk of forgery. To address this issue, a stress luminescent material based on NaNbO₃:Pr³⁺ was developed and applied in anti-counterfeiting devices. Experimental results demonstrate that compared to undoped NaNbO₃, the Pr³⁺-doped material exhibits new absorption peaks within the 350 – 500 nm range. The stress luminescence intensity of the material increases initially and then decreases with rising annealing temperatures and Pr³⁺ doping concentrations. The optimal annealing temperature and doping concentration, yielding the highest stress luminescence intensity, were identified as 1075 °C and 0.7 %, respectively. Additionally, while the luminescence intensity of NaNbO₃:Pr³⁺ diminishes with repeated friction, its luminescent performance is restored after UV irradiation. In anti-counterfeiting device testing, the device incorporating 1075 °C annealed NaNbO₃:0.7 %Pr³⁺ was able to effectively capture variations in the writer’s force during the writing process. This capability reflects the writer's unique writing habits, thereby enhancing the anti-counterfeiting effectiveness of electronic signatures. These findings indicate that the proposed NaNbO₃:Pr³⁺ stress luminescent material can effectively encode personalized information in electronic signatures, significantly improving their anti-counterfeiting performance.