Investigation of Electrical Behavior in Back Gated Graphene FET

Rachid FATES; Toufik  BENKEDIDAH; Riad REMMOUCHE; Jean-Pierre RASKIN

doi:10.5755/j02.ms.41386

Authors

Rachid FATES University of Mohamed Seddik Benyahia – Jijel https://orcid.org/0000-0001-7970-2723
Toufik BENKEDIDAH University of Mohamed Seddik Benyahia – Jijel https://orcid.org/0009-0003-6944-1808
Riad REMMOUCHE University of Mohamed Seddik Benyahia – Jijel https://orcid.org/0000-0002-2980-039X
Jean-Pierre RASKIN Université Catholique de Louvain https://orcid.org/0000-0001-9715-9699

DOI:

https://doi.org/10.5755/j02.ms.41386

Keywords:

graphene, ribbons, characterization, doping, behavior

Abstract

New measurements of graphene ribbons allowed to highlight three electrical behaviors. We identified a mixed behavior consisting of a linear and a nonlinear trends. The measurements are associated with simulations in order to explain the charge carrier distribution in graphene and its impact on the transport in graphene devices. The results show the importance of the oxide doping and the minimum doping on the electrical activity of graphene. For the linear trend, a high and quite uniform doping is observed, around 10¹³ cm⁻². So, for the linear and the mixed trends, the doping change between 10¹¹–10¹² cm⁻² and its distribution is localized close to the source and/or the drain terminals.

Investigation of Electrical Behavior in Back Gated Graphene FET

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