Investigation of Electrical Behavior in Back Gated Graphene FET
DOI:
https://doi.org/10.5755/j02.ms.41386Keywords:
graphene, ribbons, characterization, doping, behaviorAbstract
New measurements of graphene ribbons allowed to highlight three electrical behaviors. We identified a mixed behavior consisting of a linear and a nonlinear trends. The measurements are associated with simulations in order to explain the charge carrier distribution in graphene and its impact on the transport in graphene devices. The results show the importance of the oxide doping and the minimum doping on the electrical activity of graphene. For the linear trend, a high and quite uniform doping is observed, around 1013 cm−2. So, for the linear and the mixed trends, the doping change between 1011–1012 cm−2 and its distribution is localized close to the source and/or the drain terminals.
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