Dynamical Study of Heat Transport Properties of Porous Silicon

Authors

  • Neringa Samuoliene Vilnius Gediminas Technical University
  • Jonas Gradauskas 1. Center for Physical Sciences and Technology and Center for Physical Sciences and Technology 2. Vilnius Gediminas Technical University
  • Algirdas Sužiedelis 1. Center for Physical Sciences and Technology and Center for Physical Sciences and Technology 2. Vilnius Gediminas Technical University
  • Marius Treideris Center for Physical Sciences and Technology and Center for Physical Sciences and Technology
  • Viktoras Vaičikauskas Center for Physical Sciences and Technology and Center for Physical Sciences and Technology

DOI:

https://doi.org/10.5755/j01.ms.21.2.5785

Keywords:

porous silicon, transient thermoelectric effect, thermal conductivity, thermoelectric material

Abstract

A new technique to determine thermal conductivity of porous silicon is proposed. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and knowledge of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For n-type Si of 70% porosity we show the value of 35 W m-1 K-1. The method can be easily applied for any other porous or otherwise structured low-dimensional media.

DOI: http://dx.doi.org/10.5755/j01.ms.21.2.5785

Author Biographies

  • Neringa Samuoliene, Vilnius Gediminas Technical University
    Faculty of fundamental sciences, department of physics, Lector
  • Jonas Gradauskas, 1. Center for Physical Sciences and Technology and Center for Physical Sciences and Technology 2. Vilnius Gediminas Technical University
    profesorius
    dr. doc.

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Published

2015-06-12

Issue

Vol. 21 No. 2 (2015)

Section

ELECTRONIC AND OPTICAL MATERIALS

License

 

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