Electrical Transport and Magnetoresistance in Single-Wall Carbon Nanotubes Films

Authors

  • Vitaly KSENEVICH Department of Physics, Belarusian State University
  • Mikhail SHUBA Institute for Nuclear Problems, Belarusian State University
  • Alesia PADDUBSKAYA Institute for Nuclear Problems, Belarusian State University

DOI:

https://doi.org/10.5755/j01.ms.20.2.6311

Keywords:

carbon nanotubes, charge transport, magnetoresistance, weak localization, electron-electron interaction

Abstract

Electrical transport properties and magnetoresistance of single-wall carbon nanotubes (SWCNT) films were investigated within temperature range (2 – 300) K and in magnetic fields up to 8 T. A crossover between metallic (dR/dT > 0) and non-metallic (dR/dT < 0) temperature dependence of the resistance as well as low-temperature saturation of the resistance in high bias regime indicated on the diminishing of role of the contact barriers between individual nanotubes essential for the charge transport in SWCNT arrays. The magnetoresistance (MR) data demonstrated influence of weak localization and electron-electron interactions on charge transport properties in SWCNT films. The low-field negative MR with positive upturn was observed at low temperatures. At T > 10 K only negative MR was observed in the whole range of available magnetic fields. The negative MR can be approximated using 1D weak localization (WL) model. The low temperature positive MR is induced by contribution from electron-electron interactions.

DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6311

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Published

2014-06-13

Issue

Vol. 20 No. 2 (2014)

Section

ELECTRONIC AND OPTICAL MATERIALS

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