Time-resolved Photoluminescence Characterisation of GaAs/AlxGa1–xAs Structures Designed for Microwave and Terahertz Detectors

Authors

  • Aurimas ČERŠKUS Center for Physical Sciences and Technology
  • Viktorija NARGELIENĖ Center for Physical Sciences and Technology
  • Algirdas SUŽIEDĖLIS Center for Physical Sciences and Technology
  • Steponas AŠMONTAS Center for Physical Sciences and Technology
  • Jonas GRADAUSKAS Center for Physical Sciences and Technology
  • Benas KUNDROTAS Vilnius Gediminas Technical University
  • Roma RINKEVIČIENĖ Vilnius Gediminas Technical University

DOI:

https://doi.org/10.5755/j01.ms.20.2.6317

Keywords:

GaAs, AlGaAs, heterostructures, photoluminescence, lifetime, exciton, time-resolved photoluminescence

Abstract

The time-resolved photoluminescence of donor Si-doped GaAs/AlxGa1-xAs (x = 0.3 0.25, 0.2, 0.1) structures designed for microwave and terahertz detectors have been investigated at T = 3.6 K temperature. The excitonic, impurity and defect related emission lifetimes are revealed for these structures. Possible mechanisms of carrier recombination are discussed. Concentration of acceptor, carbon and silicon, are evaluated from measured lifetimes in the structures.

 

DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6317

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Published

2014-06-13

Issue

Vol. 20 No. 2 (2014)

Section

ELECTRONIC AND OPTICAL MATERIALS

License

 

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