Peculiarities of Temperature Dependence of Detected Voltage by GaAs/Al0.25Ga0.75As Heterojunction Microwave Diode Near Interwalley Crossover

Authors

  • Algirdas SUŽIEDĖLIS Center for Physical Sciences and Technology
  • Steponas AŠMONTAS Center for Physical Sciences and Technology
  • Jonas GRADAUSKAS Center for Physical Sciences and Technology
  • Viktorija NARGELIENĖ Center for Physical Sciences and Technology
  • Aurimas ČERŠKUS Center for Physical Sciences and Technology
  • Andžej LUČUN Center for Physical Sciences and Technology
  • Tomas ANBINDERIS Center for Physical Sciences and Technology
  • Irina PAPSUJEVA Center for Physical Sciences and Technology
  • Aleksandras NARKŪNAS Center for Physical Sciences and Technology
  • Benas KUNDROTAS Vilnius Gediminas Technical University
  • Roma RINKEVIČIENĖ Vilnius Gediminas Technical University

DOI:

https://doi.org/10.5755/j01.ms.20.2.6319

Keywords:

semiconductor heterojunction, microwave diode, microwave detection, temperature dependence

Abstract

In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As heterojunction diode at different ambient temperatures. These investigations enabled to reveal the reasons of voltage signal rise across the heterojunction diode placed in a microwave electric field. Different temperature dependences of the detected voltage for different types of microwave diodes fabricated on the base of GaAs/Al0.25Ga0.75As heterostructures have been measured.

DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6319

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Published

2014-06-13

Issue

Vol. 20 No. 2 (2014)

Section

ELECTRONIC AND OPTICAL MATERIALS

License

 

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