Silicon Nanostructures For Efficient Light Absorption In Photovoltaic Devices

Authors

  • Marius TREIDERIS Center for Physical Sciences and Technology
  • Virginijus BUKAUSKAS Center for Physical Sciences and Technology
  • Alfonsas RĖZA Center for Physical Sciences and Technology
  • Irena ŠIMKIENĖ Center for Physical Sciences and Technology
  • Arūnas ŠETKUS Center for Physical Sciences and Technology
  • Andrius MANEIKIS Center for Physical Sciences and Technology

DOI:

https://doi.org/10.5755/j01.ms.20.2.6326

Keywords:

porous silicon, light trapping layers, p-n junction

Abstract

Porous silicon light trapping layers (por-Si LTL) were manufactured using electrochemical etching. Optical measurements have shown the improved por-Si LTL optical properties versus bulk silicon. The p-n junction was formed by boron diffusion from borosilicate glasses. Scanning Kelvin Force Microscopy (SKFM) and Tunnelling Atomic Force Microscopy (TUNA) techniques were used to determine the location of p-n junction in samples with porous silicon light trapping layers.

DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6326

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Published

2014-06-13

Issue

Vol. 20 No. 2 (2014)

Section

ELECTRONIC AND OPTICAL MATERIALS

License

 

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