Formation Technology of Graded-Gap AlxGa1-xAs Solar Cell Structure Separated from GaAs Substrate

Authors

  • Aldis ŠILĖNAS Center for Physical Sciences and Technology
  • Angelė STEIKŪNIENĖ Center for Physical Sciences and Technology
  • Gytis STEIKŪNAS Center for Physical Sciences and Technology

DOI:

https://doi.org/10.5755/j01.ms.20.2.6327

Keywords:

graded-gap AlxGa1–xAs structure, sollar cell, selective etching

Abstract

Formation technology of graded-gap GaAs-AlxGa1–xAs sollar cell structure separated from GaAs substrate is developed. The technology composed of mechanical polishing and multi-step wet chemical etching enables to produce mechanically robust, comfortable to apply without special precautions solar cell. Open wide-gap surface obtained smooth (Ra < 21 nm) around the active area for the structure with additional GaAs stop-layer. The supporting frame formed in the perimeter of the structure protects it from a bend. The formation technology does not impair electrical properties of the grown epitaxial structure.

DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6327

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Published

2014-06-13

Issue

Vol. 20 No. 2 (2014)

Section

ELECTRONIC AND OPTICAL MATERIALS

License

 

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