Reactive Sputter Deposition of NiCrxOy Films Using NiCr Target
DOI:
https://doi.org/10.5755/j01.ms.22.2.8563Keywords:
numerical model, NiCrxOy, reactive sputtering, EDXAbstract
In this paper an original numerical model, based on the standard Berg model, was used to simulate the growth mechanism of NiCrxOy deposited with changing oxygen flow during reactive sputter deposition. The effect of oxygen flow rate on the discharge voltage, deposition rate and the material elementary composition were investigated. The ratio of Ni and Cr content in the film was measured using energy-dispersive X-ray spectroscopy (EDX). EDX detected a decrease in the Cr concentration with the increasing of oxygen flow rate due to the preferential oxidation of Cr to Cr2O3. Results show a reasonable agreement between numerical and experimental data.
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