The Investigation of the Zr-doped LaNbO4 Thin Ceramic Films by Electrochemical Impedance Spectroscopy

Authors

  • Darius Virbukas Kaunas University of Technology
  • Kristina Bočkutė Kaunas University of Technology
  • Giedrius Laukaitis Kaunas University of Technology

DOI:

https://doi.org/10.5755/j01.ms.21.3.9535

Keywords:

Complex electrochemical impedance spectroscopy, magnetron sputtering, thin films, LaNbO4

Abstract

Thin Zr-doped lanthanum niobium oxide (LaNb1-xZrxO4) films were formed on the optical quartz (SiO2) substrates using magnetron sputtering technique. Formed LaNb1-xZrxO4 thin films were characterized using different techniques: X-ray diffraction (XRD), scanning electron microscope (SEM) and impedance spectroscopy. Electrical parameters of LaNb1-xZrxO4 thin ceramic were investigated in the frequency range from 0.1 Hz to 1.0 MHz in temperature range from 773 to 1173 K.

It was determined that LaNb1-xZrxO4 thin ceramic films have the tetragonal structure and non-Debye type of relaxation. The activation energy was estimated from the relaxation time of impedance, electric modulus and conductivity resulting the activation energies vary from 1.12 ± 1 eV (Zr 1.99at.%), to 1.24 eV±1 eV (Zr 0.62at.%).

DOI: http://dx.doi.org/10.5755/j01.ms.21.3.9535

Author Biographies

Darius Virbukas, Kaunas University of Technology

Physics Department

Kristina Bočkutė, Kaunas University of Technology

Physics Department

Giedrius Laukaitis, Kaunas University of Technology

Physics Department

Downloads

Published

2015-07-27

Issue

Vol. 21 No. 3 (2015)

Section

CERAMICS AND GLASSES

License

 

The copyrights for articles in this journal are retained by the author(s), with first publication rights granted to the journal. By virtue of their appearance in this open-access journal, articles are free to use with proper attribution in educational and other non-commercial settings.