Macroporous Silicon Structures for Light Harvesting

  • Marius Treideris Center for Physical Sciences and Technology
  • Virginijus Bukauskas Center for Physical Sciences and Technology
  • Alfonsas Rėza Center for Physical Sciences and Technology
  • Irena Šimkienė Center for Physical Sciences and Technology
  • Arūnas Šetkus Center for Physical Sciences and Technology
  • Andrius Maneikis Center for Physical Sciences and Technology
  • Viktorija Strazdienė Center for Physical Sciences and Technology
Keywords: porous silicon, antireflection coatings, p-n junction

Abstract

Macroporous silicon light trapping layers on the surface of p-type substrates were manufactured by using electrochemical etching. Optical measurements have shown the decreased optical reflection as compared to bulk silicon. The p-n junction was formed by phosphorus diffusion from phosphosilicate glasses. Scanning Kelvin Force Microscopy technique was used to determine the location of p-n junction in samples with porous silicon layers.

DOI: http://dx.doi.org/10.5755/j01.ms.21.1.5725

Published
2015-03-24
Section
ELECTRONIC AND OPTICAL MATERIALS