Internal Stress Kinetics in Silicon and Silicon Oxide During Ion Irradiation
Keywords:
ion irradiation, stress, silicon, silicon oxide, amorphisation, point defect, relaxation processes.Abstract
Theoretical calculations of ion-induced stress in SiO2-Si system are done using a model where stress in plane is expressed in terms of elementary volume related to the point defect. Stress - strain dependence is defined taking in account relaxation processes in the ion irradiated solid. It is demonstrated that proposed model describes average stress dependence versus ion dose and energy. In addition to the stress due to radiation defects and implanted ions, additional source of the compressive stress (an increase of thickness of silicon oxide with the increase of ion energy and interface modification due to extra oxygen atoms) is involved
Downloads
Published
Issue
Section
License
The copyrights for articles in this journal are retained by the author(s), with first publication rights granted to the journal. By virtue of their appearance in this open-access journal, articles are free to use with proper attribution in educational and other non-commercial settings.
